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| NTS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323 Features * Advance Planar Technology for Fast Switching, Low RDS(on) * Higher Efficiency Extending Battery Life * This is a Pb-Free Device Applications http://onsemi.com V(BR)DSS 25 V 299 mW @ 2.7 V RDS(on) Typ 249 mW @ 4.5 V 0.75 A ID Max * Boost and Buck Converter * Load Switch * Battery Protection MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Continuous Drain Current (Note 1) Power Dissipation (Note 1) Power Dissipation (Note 1) Pulsed Drain Current t<5s Steady State TA = 25C TA = 25C TA = 75C PD PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID ID Value 25 "8.0 0.75 0.7 0.6 0.28 0.33 3.0 -55 to +150 0.3 260 250 W W A Unit V V A A Source 2 Gate 1 SC-70 (3-Leads) 3 Drain Top View Steady State tv5s tp = 10 ms 3 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain Operating Junction and Storage Temperature Source Current (Body Diode) (Note 1) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) ESD Rating - Machine Model C A C V 1 2 SC-70/SOT-323 CASE 419 STYLE 8 1 Gate T4 WG G 2 Source THERMAL RESISTANCE RATINGS Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 5 s (Note 1) Symbol RqJA RqJA Max 450 375 Unit C/W T4 = Device Code W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION Device NTS4409NT1G Package SOT-323 (Pb-Free) Shipping 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 2 Publication Order Number: NTS4409N/D NTS4409N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 20 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 0.6 A VGS = 2.7 V, ID = 0.2 A VGS = 4.5 V, ID = 1.2 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 0.7 A, RG = 51 W 5.0 8.2 23 41 12 8.0 35 60 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 15 V, ID = 0.8 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 49 22.4 8.0 1.2 0.2 0.28 0.3 0.50 0.40 60 30 12 1.5 nC pF gFS VDS = 5.0 V, ID = 0.5 A VGS = VDS, ID = 250 mA 0.65 -2.0 249 299 260 0.5 S 350 400 1.5 V mV/C mW IGSS TJ = 25C TJ = 70C TJ = 125C VDS = 0 V, VGS = 8.0 V VGS = 0 V, ID = 250 mA 25 30 0.5 2.0 5.0 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 0.6 A TJ = 25C 0.82 1.20 V 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTS4409N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 3.2 8V ID, DRAIN CURRENT (AMPS) 4.5 V 2.4 3V 2.5 V 1.6 VGS = 2 V TJ = 25C ID, DRAIN CURRENT (AMPS) 3.2 VDS 10 V 2.4 1.6 0.8 VGS = 1.5 V 0 0 0.8 25C TJ = 125C 0 TJ = -55C 4 0.5 1 1.5 2 2.5 3 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.8 1.6 3.2 2.4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.8 Figure 2. Transfer Characteristics VGS = 4.5 V VGS = 2.5 V TJ = 125C 0.6 TJ = 125C 0.6 0.4 TJ = 25C 0.4 TJ = 25C 0.2 TJ = -55C 0 0 0.8 1.6 2.4 ID, DRAIN CURRENT (AMPS) 3.2 0.2 TJ = -55C 0 0 0.8 1.6 2.4 ID, DRAIN CURRENT (AMPS) 3.2 Figure 3. On-Resistance vs. Drain Current and Temperature 2 ID = 0.75 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 0 -25 0 25 50 75 100 125 150 0 C, CAPACITANCE (pF) VGS = 2.5 V 80 100 Figure 4. On-Resistance vs. Drain Current and Gate Voltage TJ = 25C VGS = 0 V 60 Ciss 40 Coss Crss 5 10 15 20 25 VGS = 4.5 V 20 TJ, JUNCTION TEMPERATURE (C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTS4409N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 3.2 VGS = 0 V 2.4 1.6 2 1 0 0 0.2 0.4 0.6 0.8 1.0 Qg, TOTAL GATE CHARGE (nC) ID = 0.8 A TJ = 25C 1.2 1.4 0.8 TJ = 125C 0 0 0.2 0.4 0.6 TJ = 25C 0.8 1 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 NTS4409N PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE M D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. HE 1 2 E b e A 0.05 (0.002) A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 A1 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTS4409N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTS4409N/D |
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